Micron Technology DRAM SDRAM-DDR3L, Part #: MT53D512M32D2DS-053 AUT:D | Dynamic random access memory | DEX rf amplifiers SKU : GEC:5114536-112

SKU : GEC:5114536-112

VIDEO 1024MB GDDR5 PCI-E 2

46-219465P1

Xilinx Field Programmable Gate Array Part #XC7VX980T-L2FFG1930E

fuse bracket

Micron Technology DRAM SDRAM-DDR3L, Part #: MT53D512M32D2DS-053 AUT:D | Dynamic random access memory | DEX rf amplifiers SKU : GEC:5114536-112Micron Technology DRAM SDRAMMobile , Part #: MT53D512M32D2DS 053 AUT: D features: VDD = VDDQ = 1. 5V 0. 075V 1. 5V center terminated push pull I O Differential bidirectional data strobe 8n bit prefetch architecture Differential clock inputs (CK, CK#) 8 internal banks Nominal and dynamic on die termination (ODT) for data, strobe, and mask signals Programmable CAS READ latency (CL) Posted CAS additive latency (AL) Programmable CAS WRITE latency (CWL)