Micron Technology DRAM SDRAMMobile-, Part #: MT40A1G8SA-075:E | Dynamic random access memory | DEX Woodward OSM:MC7815ACD2TG

OSM:MC7815ACD2TG

Precision temperature-compensated voltage reference

Optional / Part #ST-58E-R

Vishay Discreet Semiconductor Part #VS-U5FX60FA120

Disposable Hooded Bouffant Caps $0

Micron Technology DRAM SDRAMMobile-, Part #: MT40A1G8SA-075:E | Dynamic random access memory | DEX Woodward OSM:MC7815ACD2TGMicron Technology DRAM SDRAM DDR4, Part #: MT40A1G8SA 075: E features: VDD = VDDQ = 1. 2V 60mV VPP = 2. 5V 125mV +250mV On die, internal, adjustable VREFDQ generation 1. 2V pseudo open drain I O Refresh time of 8192 cycle at TC temperature range: 64ms at 40C to 85C 32ms at 85C to 95C 16ms at 95C to 105C 8ms at 105C to 125C 16 internal banks (x8): 4 groups of 4 banks each 8 internal banks (x16): 2 groups of 4 banks each 8n bit prefetch architecture